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Wafer Dicing * Indium Tin Oxide * Float Zone * Super-Thin & Flat Wafer Silicon 25um, 50um, 75um, 100um For MEMS

Silicon Nitride has good high temperature strength, creep resistance and oxidation resistance. Silicon Nitride's low thermal expansion coefficient gives good thermal shock resistance. Silicon Nitride is produced in three main types; Reaction Bonded Silicon Nitride (RBSN), Hot Pressed Silicon Nitride (HPSN) and Sintered Silicon Nitride (SSN). We have Silicon Nitride 2" - 12" all specs and quanities.

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Our PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films. 

• Wafers Sizes up to 300mm

• Capable of handling custom substrate shapes, sizes and materials

• Thickness up to 2µm

• Tolerance: +/- 7% or better

• Film Stress: 600MPa Tensile

• Refractive Index: 2.00

• Temperature: 350C

Our PECVD OxyNitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD OxyNitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films. 

• Wafers Sizes up to 300mm

• Capable of handling custom substrate shapes, sizes and materials

• Thickness up to 2µm

• Tolerance: +/- 7% or better

• Film Stress: Variable

• Refractive Index: 1.5-1.9 (Per customer request)

• Temperature: 350C

Our Low Stress PECVD Nitride is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because Low Stress PECVD Nitride is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films. 

• Wafers Sizes up to 300mm

• Capable of handling custom substrate shapes, sizes and materials

• Thickness up to 2µm

• Tolerance: +/- 7% or better

• Film Stress: <250MPa

• Refractive Index: 2.00

• Temperature: 350C

Our PECVD Oxide is a single sided film that has been optimized for wafers requiring minimal thermal processing. Because PECVD is a deposited oxide, it offers greater flexibility than thermal oxide and can be deposited over any of our other thin films. 

• Wafers Sizes up to 300mm
• Capable of handling custom substrate shapes, sizes and materials
• Thickness up to 2µm
• Tolerance: +/- 7% or better
• Film Stress: 400MPa Compressive
• Refractive Index: 1.46
• Temperature: 350C

PECVD Silicon Carbide for wafers requiring minimal thermal processing. Because PECVD Silicon Carbide is deposited at low temperatures, it offers greater flexibility and can be deposited over any of our other thin films

• Wafers Sizes up to 300mm
• Capable of handling custom substrate shapes, sizes and materials
• Thickness up to 2um
• Tolerance: +/- 7% or better
• Film Stress: <100MPa
• Refractive Index: 2.73
• Temperature: 350C